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| Returns | 1D | 1M | 3M | YTD | 1Y | 3Y | 5Y | MAX |
|---|---|---|---|---|---|---|---|---|
| Total return | ▼ −6.1% | ▼ −23.4% | — | — | — | — | — | ▼ −27.4% |
| Peer average | ▼ −2.3% | ▼ −8.9% | ▲ +0.2% | ▲ +27.8% | ▲ +22.7% | ▲ +154.7% | ▲ +100.8% | — |
| S&P 500 · VOO | ▼ −0.4% | ▲ +0.9% | ▲ +3.3% | ▲ +13.8% | ▲ +13.3% | ▲ +88.8% | ▲ +81.9% | — |
Reported holdings are shown below. A share-of-fund chart is unavailable for this portfolio.
Holdings as of 2026-11-02. Derivatives are shown using their reported instrument names.
| Holding | Instrument | Weight |
|---|---|---|
| BITA CHINA MEMORY INDEX-SWAP-GOLD-L | swap | 100.13% |
| First American Government Obligations Fund 12/01/2031 | Reported holding | 22.15% |
| Cash & Other | Reported holding | -22.28% |
The fund seeks to track the performance, before fees and expenses, of the BITA China Memory Index. Under normal circumstances, the Fund will invest at least 80% of its assets in investments that provide exposure to the component securities of the Index, which are companies engaged in China memory and storage semiconductor value chain activities.
Distribution yield and SEC yield use different methodologies. Payouts may include income, capital gains, or return of capital.
Verified payout history is unavailable.
Estimated annual expense excludes trading costs and assumes constant assets. Fee waivers and fund costs can change.
Historical risk measures describe past behavior and do not predict future returns.
Hear the strategy from the people behind CRAM.