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| Returns | 1D | 1M | 3M | YTD | 1Y | 3Y | 5Y | MAX |
|---|---|---|---|---|---|---|---|---|
| Total return | ▼ −4.4% | ▼ −14.3% | ▲ +2.7% | — | — | — | — | ▲ +86.4% |
| Peer average | ▼ −2.3% | ▼ −8.9% | ▲ +0.2% | ▲ +27.8% | ▲ +22.7% | ▲ +154.7% | ▲ +100.8% | — |
| S&P 500 · VOO | ▼ −0.4% | ▲ +0.9% | ▲ +3.3% | ▲ +13.8% | ▲ +13.3% | ▲ +88.8% | ▲ +81.9% | — |
Reported holdings are shown below. A share-of-fund chart is unavailable for this portfolio.
Holdings as of 2026-10-30. Derivatives are shown using their reported instrument names.
| Holding | Instrument | Weight |
|---|---|---|
| 005930.KSSamsung Electronics Co Ltd | Reported holding | 18.44% |
| 000660.KSSK hynix Inc | Reported holding | 16.17% |
| FGXXXFirst American Government Obligations Fund 12/01/2031 | Reported holding | 15.75% |
| 912797VP9United States Treasury Bill 11/03/2026 | Reported holding | 14.90% |
| MICRON TECHNOLOGY INC SWAP NM | swap | 12.99% |
| MICRON TECHNOLOGY, INC.-SWAP-GOLD-L | swap | 11.20% |
| 912797WN3United States Treasury Bill 01/05/2027 | Reported holding | 9.86% |
| SAMSUNG ELECTRONICS -SWAP-GOLD-L | swap | 6.80% |
| SK HYNIX INC-SWAP-GOLD-L | swap | 6.06% |
| 912797VA2United States Treasury Bill 12/03/2026 | Reported holding | 4.95% |
| CXMT CORPORATION-SWAP-GOLD-L | swap | 4.66% |
| SNDKSandisk Corp | Reported holding | 4.23% |
| STXSeagate Technology Holdings PLC | Reported holding | 4.22% |
| WDCWestern Digital Corp | Reported holding | 3.69% |
| 285A.TKioxia Holdings Corp | Reported holding | 3.03% |
| MUMicron Technology Inc | Reported holding | 2.92% |
| 2408.TWNanya Technology Corp | Reported holding | 2.60% |
| 2344.TWWinbond Electronics Corp | Reported holding | 1.24% |
| 603986.SSGigaDevice Semiconductor Inc | Reported holding | 0.86% |
| SKHYSK hynix Inc | Reported holding | 0.68% |
| 005935.KSSamsung Electronics Co Ltd | Reported holding | 0.12% |
| KRWSOUTH KOREA WON | Reported holding | 0.04% |
| TWDNEW TAIWAN DOLLAR | Reported holding | 0.00% |
| CNYCHINESE YUAN | Reported holding | -0.00% |
| Cash & Other | Reported holding | -45.40% |
Official documents are being connected from SEC EDGAR. Read the issuer’s prospectus before investing.
The Roundhill Memory ETF (DRAM) is designed to offer investors a focused investment opportunity within the worldwide semiconductor memory industry. Its portfolio is strategically constructed to prioritize leading companies that command substantial market presence and revenue in memory products and associated technologies. This includes a broad spectrum of memory solutions such as high bandwidth memory, dynamic random-access memory (DRAM), NAND flash memory (encompassing solid-state drives built on NAND), NOR flash memory, hard disk drives, and specialized or embedded memory components. The fund's deliberate emphasis on major, large-capitalization firms is deemed essential for supporting the advancements in artificial intelligence. To execute its active investment approach, the fund has the flexibility to invest in common stocks or financial derivatives, such as swaps or forwards. The allocation of portfolio weights follows a modified market capitalization methodology, with a safeguard that no single company can constitute more than 25% of the fund. These weightings are determined by the advisor's evaluation of each company's market position and revenue generation within the memory sector. The portfolio undergoes rebalancing at a minimum of every three months.
Distribution yield and SEC yield use different methodologies. Payouts may include income, capital gains, or return of capital.
Verified payout history is unavailable.
Estimated annual expense excludes trading costs and assumes constant assets. Fee waivers and fund costs can change.
Historical risk measures describe past behavior and do not predict future returns.
Hear the strategy from the people behind DRAM.